IXGP42N30C3

GenX3TM 300V IGBT IXGA42N30C3 High Speed PT IGBTs for 50-150kHz switching IXGH42N30C3 IXGP42N30C3 VCES IC110 VCE(sat) tfi typ = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum Ratings 300 300 ±20 ±30 42 250 42 250 ICM = 84 223 -55 ... +150 150 -55 ... +150 V V V V A A A mJ A W °C °C °C °C °C Nm/lb.in. g g g G C C (TAB) E C = Collector TAB = Collector G C E C (TAB) G E C (TAB) TO-247 (IXGH) TO-220 (IXGP) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque (TO-247)(TO-220) TO-263 TO-247 TO-220 300 260 1.13/10 2.5 6.0 3.0 G = Gate E = Emitter Features z z z z Optimized for low switching losses Square RBSOA High current handling capability International standard packages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 ±100 1.54 1.54 1.85 TJ = 125°C V V μA μA nA V V Advantages z z High power density Low gate drive requirement VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 42A, VGE = 15V, Note1 Applications z z z z z z z z High Frequency P...