IXGH48N60B3

GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.8V TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 280 ICM = 120 300 -55 ... +150 150 -55 ... +150 V V V V A A A W °C °C °C °C °C Nm/lb.in. g g g G G G E (TAB) TO-220 (IXGP) C (TAB) E TO-247 (IXGH) C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-220) TO-263 TO-220 TO-247 300 260 1.13/10 2.5 3.0 6.0 E (TAB) G = Gate E = Emitter Features z C = Collector TAB = Collector www.DataSheet4U.net z z Optimized for low conduction and switching losses Square RBSOA International standard packages Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. 600 3.0 5.0 Typ. Max. V V 25 μ A 250 μA ±100 nA 1.8 V z z High power density Low gate drive requirement Applications z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts © 2008 IXYS CORPORATION, All right...