IXGA30N60C3D4

Preliminary Technical Information GenX3TM 600V IGBT With Diode High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 30 150 ICM = 60 220 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C °C Nm/lb.in. g g Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages High power density Low gate drive requirement Features G C C(TAB) E G E C(TAB) TO-220 (IXGP) G = Gate E = Emitter C = Collector TAB = Collector 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 300 260 1.13/10 2.5 3.0 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C Characteristic Values Min. 600 3.5 5.5 Typ. Max. V V 75 μA 500 μA ±100 nA 2.6 1.8 3.0 V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts © 2008 IXYS CORPORA...