IXFZ140N25T

Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFZ140N25T VDSS ID25 = = RDS(on) ≤ ≤ trr 250V 100A 17mΩ 200ns D DE475 D D Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C Maximum Ratings 250 250 ±20 ±30 100 400 40 3 445 20 -55 ... +150 150 -55 ... +150 V V V V A A A J W V/ns °C °C °C V~ V~ °C °C N/lb. g G S S Isolated Tab G = Gate S = Source D = Drain Features z 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net t = 1 minute t = 1 second 2500 3000 300 260 20..120 / 4.5..27 3 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±200 V V nA z Easy to Mount Space ...