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IXFV110N25TS

IXYS Corporation
Part Number IXFV110N25TS
Manufacturer IXYS Corporation
Description Trench Gate Power HiperFET
Published May 23, 2011
Detailed Description Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IX...
Datasheet PDF File IXFV110N25TS PDF File

IXFV110N25TS
IXFV110N25TS

Overview
Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 .
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+150 150 -55 .
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+150 V V V V A A A A J V/ns W °C °C °C °C °C N/lb.
g PLUS220 (IXFV) G D S (TAB) PLUS220SMD (IXFV_S) G S D (TAB) G = Gate S = S...


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