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IXFV110N25T

IXYS Corporation

Trench Gate Power HiperFET

Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IX...



IXFV110N25T

IXYS Corporation


Octopart Stock #: O-698593

Findchips Stock #: 698593-F

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Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g PLUS220 (IXFV) G D S (TAB) PLUS220SMD (IXFV_S) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting force 300 260 11..65 / 2.5..14.6 4 Features z z International standard packages Avalanche rated www.DataSheet4U.net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 ± 200 V V nA Applications z z z z z z Easy to mount Space savings High power density 10 μA 1 mA 24 mΩ VGS = 10V, ID = 0.5 ID25, Notes 1, 2 z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies © 2008 IXYS CORPORATION, All rights ...




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