IXFH88N30P

PolarTM HiPerFETTM Power MOSFET IXFT88N30P IXFH88N30P IXFK88N30P VDSS ID25 trr RDS(on) = = ≤ ≤ 300V 88A 40mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net TO-268 (IXFT) G S Tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 88 75 220 60 2 10 600 -55 to +150 +150 -55 to +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g TO-247(IXFH) G D S Tab TO-264 (IXFK) G D S Tab G = Gate S = Source Features z z z z z D = Drain Tab = Drain 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-264) TO-268 TO-247 TO-264 300 260 1.13/10 4 6 10 International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 300 2.5 5.0 V V ±100 nA 25 μA 250 μA 40 mΩ z High Power Density Easy to Mount Space Savings Applications z z DC-DC Coverters Battery Chargers z Switch-Mode and Reso...