Document
Advance Technical Information
Polar3TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
VDSS ID25
RDS(on)
= 600V = 50A ≤ 145mΩ
TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 50 125 25 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g Features
z z z z
G D
S
D (Tab)
TO-247 (IXFH)
G
D
S
D (Tab) D = Drain Tab = Drain
G = Gate S = Source
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
300 260 1.13 / 10 4.0 5.5 6.0
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA
z z
High Power Density Easy to Mount Space Savings
Applications
z
25 μA 2 mA 145 mΩ
z z z z
VGS = 10V, ID = 0.5 • ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100310(03/11)
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247 & TO-3P) 0.25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 32 55 6300 630 2.5 1.0 31 20 62 17 94 27 23 S pF pF pF Ω ns ns ns ns nC nC nC 0.12 °C/W °C/W TO-3P Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr IRM QRM Note
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Characteristic Values Min. Typ. Max. 50 200 1.4 250 11 1.1 A A V ns A μC
1 2 3
VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-247 Outline
∅P
TO-263 Outline
e
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Fig. 1. Output Characteristics @ T J = 25ºC
50 45 40 35 VGS = 10V 7V 100 90 80 70 7V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
ID - Amperes
30 6V 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V
ID - Amperes
60 50 40 6V 30 20 10 0 0 5 10 15 20 25 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
50 45 40 35 VGS = 10V 7V 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 4V 0 0 2 4 6 8 10 12 14 16 18 0.2 -50
Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature
VGS = 10V
30 25 20 15 10 5 5V
R DS(on) - Normalized
6V
I D = 50A
ID - Amperes
I D = 25A
-25
0
25
50
75
100
125
150
VDS - Volts
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TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current
3.0 VGS = 10V 2.6 TJ = 125ºC 50 60
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.2
40
ID - Amperes
TJ = 25ºC 0 10 20 30 40 50 60 70 80 90 100
1.8
30
1.4
20
1.0
10
0.6
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IX.