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IXFQ50N60P3 Dataheets PDF



Part Number IXFQ50N60P3
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Polar3 HiperFET Power MOSFET
Datasheet IXFQ50N60P3 DatasheetIXFQ50N60P3 Datasheet (PDF)

Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS ID25 RDS(on) = 600V = 50A ≤ 145mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C .

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Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 VDSS ID25 RDS(on) = 600V = 50A ≤ 145mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 50 125 25 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g Features z z z z G D S D (Tab) TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 300 260 1.13 / 10 4.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z z High Power Density Easy to Mount Space Savings Applications z 25 μA 2 mA 145 mΩ z z z z VGS = 10V, ID = 0.5 • ID25, Note 1 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2011 IXYS CORPORATION, All Rights Reserved DS100310(03/11) IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247 & TO-3P) 0.25 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 32 55 6300 630 2.5 1.0 31 20 62 17 94 27 23 S pF pF pF Ω ns ns ns ns nC nC nC 0.12 °C/W °C/W TO-3P Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr IRM QRM Note www.DataSheet4U.net Characteristic Values Min. Typ. Max. 50 200 1.4 250 11 1.1 A A V ns A μC 1 2 3 VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-247 Outline ∅P TO-263 Outline e Terminals: 1 - Gate 3 - Source 2 - Drain Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 7,157,338B2 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 1. Output Characteristics @ T J = 25ºC 50 45 40 35 VGS = 10V 7V 100 90 80 70 7V VGS = 10V 8V Fig. 2. Extended Output Characteristics @ T J = 25ºC ID - Amperes 30 6V 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V ID - Amperes 60 50 40 6V 30 20 10 0 0 5 10 15 20 25 30 5V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC 50 45 40 35 VGS = 10V 7V 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 4V 0 0 2 4 6 8 10 12 14 16 18 0.2 -50 Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature VGS = 10V 30 25 20 15 10 5 5V R DS(on) - Normalized 6V I D = 50A ID - Amperes I D = 25A -25 0 25 50 75 100 125 150 VDS - Volts www.DataSheet4U.net TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 3.0 VGS = 10V 2.6 TJ = 125ºC 50 60 Fig. 6. Maximum Drain Current vs. Case Temperature R DS(on) - Normalized 2.2 40 ID - Amperes TJ = 25ºC 0 10 20 30 40 50 60 70 80 90 100 1.8 30 1.4 20 1.0 10 0.6 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved IXFT50N60P3 IX.


IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3


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