IXFR80N20Q

HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C Maximum Ratings 200 200 ±20 ±30 71 320 80 45 1.5 5 310 -55 ... +150 150 -55 ... +150 300 1.13/10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 5 g VDSS ID25 RDS(on) = 200 V = 71 A = 28m W trr £ 200 ns ISOPLUS 247TM E153432 G D G = Gate S = Source D = Drain TAB = Drain Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages www.DataSheet4U.net Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 25 1 28 V V nA mA mA mW VDSS VGS(th) IGSS IDSS RDS(on) VG...