IXFR30N110P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC www.DataSheet4U.net IXFR30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 16A 400mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ± 40 16 75 15 1.5 15 320 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb. g ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain Features Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Weight Advantages Easy assembly Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 15A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1100 3.5 6.5 ± 200 V V nA Applications: z z z 50 μA 2.5 mA 400 mΩ z z ...