IXFR180N15P

PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFR 180N15P VDSS ID25 (Electrically Isolated Back Surface) RDS(on) trr = = ≤ ≤ 150 V 100 A 13 mΩ 200 ns Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External Lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 150 150 ±20 ±30 100 75 380 60 100 4 10 300 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ N/lb g l ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l TL 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 20..120 / 4.5..26 5 VISOL Fd Weight l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS, VGS = 0 V VGS = 10 V, ID = IT , Note 1 TJ = 150° C...