3VD186600YL
3VD186600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a...
