Diodes for Protecting against ESD
DF2S6.2FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S6.2FS
Product for Use Only as Protection ...
Description
DF2S6.2FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S6.2FS
Product for Use Only as Protection against Electrostatic Discharge (ESD).
0.6±0.05
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z 2terminal ultra small package suitable for mounting on small space.
CATHODE MARK
A
0.1
Characteristic Power dissipation Junction temperature Storage temperature range
Symbol P* Tj Tstg
Rating 150* 150 −55~150
Unit mW °C °C fSC
0.48+0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ⎯ temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ⎯ operating temperature/current/voltage, etc.) are within the TOSHIBA 1-1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.0006 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Pad Dimension(Reference)Unit : mm
0.85
www.DataSheet4U.net
0.26 0.21
Electrical Characteristics (Ta = 25°C)
Characteristic Zener voltage Dy...
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