Power MOSFET
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Description
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA5N100P IXFH5N100P IXFP5N100P
RDS(on)
VDSS ID25
= 1000V = 5A ≤ 2.8Ω
TO-263 (IXFA)
G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ±30 ±40 5 10 5 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g
G = Gate S = Source G G D S
S
(TAB)
TO-247 (IXFH)
(TAB)
TO-220 (IXFP)
DS
(TAB)
1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque TO-263 TO-220 TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 6.0
D = Drain TAB = Drain
Features
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International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V
Advantages
z z
Easy to mount Space savings
Applications:
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±100 nA 10 μA 750 μA 2.8 Ω
VGS = 10V, ID = 0.5 ID25, Note 1
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