IXFP4N100QM

Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C IXFP4N100QM VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700 5 46 - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g OVERMOLDED (IXFP...M) OUTLINE G TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C DS D = Drain G = Gate S = Source Features Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages www.DataSheet4U.net Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 5.0 V V High Power Density Easy to Mount Space Savings ±100 nA 25 μA 1 mA 3.0 Ω © 2009 IXYS CORPORATION, All Rights Reserved DS100165(06/09) IXFP4N100QM Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crs...