IXFA130N10T

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C 65 A 750 mJ TC = 25C 360 W -55 ... +175 C 175 C -55 ... +175 C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V  200 nA 10 A 500A 9.1 m VDSS = ID25 = RDS(on)  100V 130A 9.1m TO-263 (IXFA) TO-220 (IXFP) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Ultra-Low On Resistance  Avalanche Rated  Low Package Inductance - Easy to Drive and to Protect  175C Operating Temperature  Fast Intrinsic Diode Advantages  Easy to Mount  Space Savings  Hig...