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PSMN2R2-30YLC Dataheets PDF



Part Number PSMN2R2-30YLC
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel MOSFET
Datasheet PSMN2R2-30YLC DatasheetPSMN2R2-30YLC Datasheet (PDF)

LF PA K PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimis.

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LF PA K PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID www.DataSheet4U.net Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 2.3 1.8 Max Unit 30 100 141 175 2.8 V A W °C mΩ Ptot Tj RDSon Static characteristics 2.15 mΩ NXP Semiconductors PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower Quick reference data …continued Parameter gate-drain charge Conditions VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ 8 Max Unit nC Table 1. Symbol QGD Dynamic characteristics QG(tot) total gate charge - 26 - nC [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 mbb076 Simplified outline mb Graphic symbol D G S SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Package Name PSMN2R2-30YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number 4. Marking www.DataSheet4U.net Table 4. Marking codes Marking code[1] 2C230L Type number PSMN2R2-30YLC [1] % = placeholder for manufacturing site code PSMN2R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 3 May 2011 2 of 15 NXP Semiconductors PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) VESD IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature electrostatic discharge voltage source current peak source current non-repetitive drain-source avalanche energy MM (JEDEC JESD22-A115) Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped; see Figure 3 [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 25 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 Tmb = 25 °C; see Figure 2 [1] [1] Min -20 -55 -55 630 - Max 30 30 20 100 100 765 141 175 175 260 100 765 92 Unit V V V A A A W °C °C °C V A A mJ Source-drain diode Avalanche ruggedness [1] Continuous current is limited by package. 240 ID (A) 180 www.DataSheet4U.net 003a a f 885 120 Pder (%) 80 03na19 120 (1) 40 60 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2011. All rights reserved. PSMN2R2-30YLC All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 3 May 2011 3 of 15 NXP Semiconductors PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower 103 I AL (A) 102 (1) 003a a f 899 (2) 10 1 10-1 10-3 10-2 10-1 1 tAL (ms ) 10 Fig 3. 104 ID (A) 103 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf886 Limit RDSon = VDS / ID 102 tp =10 μ s 100 μ s 10 DC 1 ms 1 10 ms 100 ms www.DataSheet4U.net 10-1 10-1 1 10 VDS (V) 102 Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 3 May 2011 4 of 15 NXP Semiconductors PSMN2R2-30YLC N-channel 30 V 2.15m.


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