IXFN44N80P

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 44N80P VDSS ID25 RDS(on) trr = 800 V = 39 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 39 100 22 80 3.4 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S G = Gate S = Source D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds Mounting torque Terminal torque 300 2500 3000 www.DataSheet4U.net 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 g Weight Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 800 μA VDS = VGS, ID = 8 mA VGS = ± 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Features International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fas...