Power MOSFET
HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS ...
Description
HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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IXFN 44N80
VDSS ID25
RDS(on)
= 800 V = 44 A = 0.165 W
D
G S
S
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features International standard packages isolation
miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters rated
50/60 Hz, RMS IISOL £ 1 mA
t = 1 min t=1s
2500 3000
Md
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Weight
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.165 V V nA mA mA W
Battery chargers Switched-mode and resonant-mode power supplies DC ...
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