GigaMOS Trench HiperFET Power MOSFET
Advance Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast ...
Description
Advance Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN420N10T
RDS(on) ≤ ≤ trr
VDSS ID25
= =
100V 420A 2.3mΩ 140ns
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md
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Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 100 100 ±20 ±30 420 200 1000 100 5 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
Weight
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20...
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