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IXFN38N100Q2

IXYS Corporation
Part Number IXFN38N100Q2
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, ...
Datasheet PDF File IXFN38N100Q2 PDF File

IXFN38N100Q2
IXFN38N100Q2

Overview
HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet VDSS = 1000 V ID25 = 38 A RDS(on)= 0.
25 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings G S 1000 1000 ±30 ±40 38 152 38 60 5.
0 20 890 -55 .
.
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+150 150 -55 .
.
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+150 V V V V A A A mJ J V/ns W °C °C °C V ...


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