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IXFN360N10T

IXYS Corporation
Part Number IXFN360N10T
Manufacturer IXYS Corporation
Description GigaMOS Trench HiperFET Power MOSFET
Published May 13, 2011
Detailed Description GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10...
Datasheet PDF File IXFN360N10T PDF File

IXFN360N10T
IXFN360N10T

Overview
GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 360A 2.
6mΩ 130ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD VISOL Md www.
DataSheet4U.
net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ±20 ±30 360 200 900 100 3 830 20 -55 .
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+175 175 -55 .
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+175 V V V V A A A A J W V/ns °C °C °C °C °C V~ V~ Nm/lb.
in...


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