IXFN26N100P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN26N100P VDSS ID25 RDS(on) trr = 1000V = 23A ≤ 390mΩ ≤ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 23 65 13 1.0 20 595 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 z z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Weight Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 13A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max...