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HiPerFETTM Power MOSFETs ISOPLUS264TM
(Electrically Isolated Backside) Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg
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IXFL 44N80
VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 550 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ g
ISOPLUS-264TM
G
C E
(TAB)
G = Gate E = Emitter
C = Collector Tab = Collector
Features
z
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z z z
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
TL
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
300 2500 3000 5
VISOL Weight
Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications
z z
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.165 Ω
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1
z z
Advantages
z z z
Easy assembly Space savings High power density
DS99085(09/03)
© 2003 IXYS All rights reserved
IXFL 44N80
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 32 50 10000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 330 35 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT RG = 1 Ω (External) 48 100 24 380 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 70 170 S pF pF pF ns ns ns ns nC nC nC 0.225 K/W 0.05 K/W ISOPLUS 264 OUTLINE
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 15 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 176 1.3 250 1.2 8 A A V ns µC A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
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Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. Test current IT = 22A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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