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IXFL44N80 Dataheets PDF



Part Number IXFL44N80
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFET Power MOSFETs ISOPLUS264
Datasheet IXFL44N80 DatasheetIXFL44N80 Datasheet (PDF)

HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ .

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HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 550 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~ g ISOPLUS-264TM G C E (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure TL 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 2500 3000 5 VISOL Weight Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.165 Ω DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1 z z Advantages z z z Easy assembly Space savings High power density DS99085(09/03) © 2003 IXYS All rights reserved IXFL 44N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 32 50 10000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 330 35 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT RG = 1 Ω (External) 48 100 24 380 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 70 170 S pF pF pF ns ns ns ns nC nC nC 0.225 K/W 0.05 K/W ISOPLUS 264 OUTLINE gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 176 1.3 250 1.2 8 A A V ns µC A IF = IS, -di/dt = 100 A/µs, VR = 100 V www.DataSheet4U.net Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. Test current IT = 22A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 .


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