IXFL44N100P

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL44N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 22A 240mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 22 110 22 2 15 357 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA Mounting force t = 1s 300 260 2500 3000 40..120/4.5..27 8 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb. g Applications Features G = Gate S = Source D = Drain G S D Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers AC ...