IXFL39N90

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 34 154 39 64 4 5 580 -40 ... +150 150 -40 ... +150 2500 3000 8 V V V V A A A mJ J V/ns W °C °C °C V~ V~ g Features z RDS(on) t = 900 V = 34 A = 220 mΩ < ns ISOPLUS-264TM G D S (Backside) G = Gate S = Source D = Drain Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z z z www.DataSheet4U.net DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 100 2 220 V V nA µA mA mΩ z z VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 3 m...