IXFT28N50F

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 28N50F VDSS IXFT 28N50F ID25 RDS(on) = 500V = 28A = 190mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 500 500 ± 20 ± 30 28 112 28 35 1.5 10 315 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) TL 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 300 Md Weight 1.13/10 Nm/lb.in. 6 4 g g Features l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 4...