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BGA2870

NXP Semiconductors

MMIC wideband amplifier

BGA2870 MMIC wideband amplifier Rev. 3 — 13 July 2015 Product data sheet 1. Product profile 1.1 General description S...


NXP Semiconductors

BGA2870

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Description
BGA2870 MMIC wideband amplifier Rev. 3 — 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits  Internally matched to 50   A gain of 31.1 dB at 500 MHz  Output power at 1 dB gain compression = 4 dBm  Supply current = 16.0 mA at a supply voltage of 2.5 V  Reverse isolation > 52 dB up to 750 MHz  Good linearity with low second order and third order products  Noise figure = 3.2 dB at 500 MHz  Unconditionally stable (K > 1)  No output inductor required 1.3 Applications  LNB IF amplifiers  General purpose low noise wideband amplifier for frequencies between DC and 750 MHz 2. Pinning information Table 1. Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol 654 1 6 3 123 4 2, 5 sym052 NXP Semiconductors BGA2870 MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description BGA2870 - plastic surface-mounted package; 6 leads Version SOT363 4. Marking Table 3. Marking Type number BGA2870 Marking code YC* Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC ICC...




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