MT29F8G08DAA

4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features Single-level cell (SLC) technology Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks READ performance – Random READ: 25µs (MAX) – Sequential READ: 25ns (MIN) WRITE performance – PROGRAM PAGE: 220µs (TYP) – BLOCK ERASE: 1.5ms (TYP) Data retention: 10 years Endurance: 100,000 PROGRAM/ERASE cycles First block (block address 00h) guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1 Industry-standard basic NAND Flash command set Advanced command set: – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – Two-plane commands – Interleaved die operations – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion WP# signal: write protect entire device RESET required after power-up www.DataSheet4U.com INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options Density2 – 4Gb (single die) – 8Gb (dual-die stack 1 CE#) – 8Gb (dual-die stack 2 CE#) – 16Gb (quad-d...