L412

Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.9V 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.8VCES 70 V V V A A A W Features High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 4 0.1 500 200 60 180 40 550 44 3.6 7 8 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W Applications switched mode power supplies DC-DC converters resonant converters lamp ballasts laser generators, x ray generators VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf C ies QGon VF RthJC IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.5 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 15/0...