L408

DSEP 8-06B HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 30 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 125°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W Nm g Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25°C mounting torque typical 60 0.4...0.6 2 Symbol IR ① Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 60 0.25 1.66 2.66 2.5 0.5 µA mA V V K/W K/W ns 2.4 A VF ② RthJC RthCH tr...