9015

UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Lead Free 9015L-x-T92-B 9015L-x-T92-K 9015L-x-T92-T Halogen Free 9015G-x-T92-B 9015G-x-T92-K 9015G-x-T92-T Package TO-92 TO-92 TO-92 Packing Tape Box Bulk Tape Reel www.DataSheet4U.com www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 2 QW-R201-032,Ba 9015 „ Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Dissipation PC 450 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE Cob fT NF TEST CONDITIONS IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -100μA, IC = 0 IC = -100mA, IB = -5mA IC = -100mA, IB = -5mA VCE = -5V, IC = -2mA VCB = -50V, IE =0 VEB = -5V, IC =0 VCE =-5V, IC = -1mA VCB = -10V, IE =0, f =1MHz VCE = ...