N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N80
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced p...
Description
UNISONIC TECHNOLOGIES CO., LTD 10N80
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=5.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-TF1-T
10N80G-TF1-T
10N80L-TF2-T
10N80G-TF2-T
10N80L-T3P-T
10N80G-T3P-T
10N80L-TQ2-T
10N80G-TQ2-T
10N80L-TQ2-R
10N80G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2
TO-3P TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tape Reel
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-218.N
10N80
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-218.N
10N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800 V
Gate-Source Voltage Continuous Drain Current (TC = 25°С)
VGSS ID
±30 V 10 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IDM EAS
20 A 770 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.2 V/ns
Power Dissipatio...
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