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DE275-501N16A
RF Power MOSFET
Description
Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified 1.6mm ...
IXYS Corporation
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DE275-501N16A
RF Power MOSFET
- IXYS Corporation
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