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DE275-102N06A
RF Power MOSFET
Description
DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 2.0W/°C above 25°C Tc = 25°C VDSS ID25 RDS(on) Maximum Ratings 1000 1000 ±20 ±30 8 48 6 20 5 >200 59...
IXYS Corporation
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DE275-102N06A
RF Power MOSFET
- IXYS Corporation
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