2SK3652

SMD Type Transistors IC N-channel Enhancement Mode MOSFET 2SK3652 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature * L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25 Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 50 200 2 200 3 100 150 -55 to +150 Unit V V A A mJ W www.DataSheet4U.com 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3652 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode foward voltage Reverse recovery time Reverse recovery charge Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol VDSS Vth IDSS IGSS Testconditons ID = 1 m...