SMD Type
Transistors IC
N-channel Enhancement Mode MOSFET 2SK3652
TO-263
+ 0 .1 1 .2 7 -0 .1
Unit: mm
+0.1 1.27-0.1 +0...
SMD Type
Transistors IC
N-channel Enhancement Mode MOSFET 2SK3652
TO-263
+ 0 .1 1 .2 7 -0 .1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance, low Qg High avalanche resistance For high-speed switching
+ 0 .2 8 .7 -0 .2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature * L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25 Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 50 200 2 200 3 100 150 -55 to +150 Unit V V A A mJ W
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5 .6 0
1 Gate 2 Drain 3 Source
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1
SMD Type
2SK3652
Electrical Characteristics Ta = 25
Parameter Gate-drain surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode foward voltage Reverse recovery time Reverse recovery charge Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol VDSS Vth IDSS IGSS Testconditons ID = 1 m...