PD - 97455
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATI...
PD - 97455
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF IRG7PH35UD1-EP
VCES = 1200V I NOMINAL = 20A
Features
Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package
C
G E
TJ(max) = 150°C
n-channel
C
VCE(on) typ. = 1.9V
Benefits
Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI
C
GC
E
TO-247AC IRG7PH35UD1PbF
E GC TO-247AD IRG7PH35UD1-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Mounting Torque, 6-32 or M3 Screw
Max.
1200 50 25 20
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