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IRG7PH35UD-EP Dataheets PDF



Part Number IRG7PH35UD-EP
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG7PH35UD-EP DatasheetIRG7PH35UD-EP Datasheet (PDF)

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH35UDPbF IRG7PH35UD-EP C VCES = 1200V I NOMINAL = 20A G E TJ(max) = 150°C Benefits • High efficiency in a wide range of applications • Suitable for a wide range .

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