PDP TRENCH IGBT
PD - 97411
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circu...
Description
PD - 97411
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRG7I313UPbF
Key Parameters
330 1.35 160 150 V V A °C
VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max
C
G E
G
C
E
n-channel
G G ate C C olle ctor
TO-220 Full-Pak IRG7I313UPbF
E Em itter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
±30 20 10 160 34 14 0.27 -40 to + 150
Units
V A W W/°C °C
c
300 10 lbf·in (1.1 N·m)
www.DataSheet4U.com Thermal Resistance...
Similar Datasheet