3DD5310A

R CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION 3DD5310A BVCBO IC VCE(sat) tf MAIN CHARACTERISTICS 1000V 10 A 0.5 V(max) 0.3 μs(max) Package TO-3P(H)IS z APPLICATIONS z Switching power supply for color TV. FEATURES 1 2 3 z 3DD5310A NPN z 3DD5310A is high breakdown ， voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT The main process of manufacture: ： high voltage planar technology, 、, triple diffused process etc., 。 adoption of fully plastic packge. RoHS product. （RoHS）。 ORDER MESSAGE Order codes 3DD5010A-O-A-N-D Halogen Free Device Weight 5.50 g(typ) Marking D5310A Package TO-3P(H)IS Packaging Foam MARKING Trademark Part No. Year month For example “8”－2008，“10”10 october www.DataSheet4U.com ：201012B 1/5 R 3DD5310A ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value 1000 600 6 10 20 5 50 150 -55~+150 Unit V V V A A W — Collector−Base Voltage — Collector−Emitter Voltage — Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Max. Junction Temperature Storage Temperature Range DC Pulse BVCBO BVCEO BVEBO IC ICP IB PC Tj TSTG ℃ ℃ ELECTRICAL CHARACTERISTICS (Tc=25℃) Parameter Tests conditions IC=10mA,IB=0 IC=1mA,IE=0 IE=1mA,IC=0 VCB=900V, IE=0 VEB=6V, IC=0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC=3A, IB=0.6A IC=3A, IB=0.6A IC=5A,2IB1=-IB2=2A fH=15.75kHz VCE=10V, IC=0.1A Min Max Unit V V V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sa...