N-channel Enhancement-mode Power MOSFET
SSM40T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, R...
Description
SSM40T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, RoHS compliant.
D
BV DSS R DS(ON) ID
30V 25mΩ 28A
G S
DESCRIPTION
The SSM40T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM40T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. G G D S
TO-263 (S)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
D
TO-220(P)
S
Units V V A A A W W/°C
Rating 30 ±25 28 24 95 31 0.25
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
°C °C
THERMAL DATA
Symbol
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Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient
Value 4 62
Units °C/W °C/W
RΘJC RΘJA
9/16/2005 Rev.3.1
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SSM40T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.032
Max. Units 25 45 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC...
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