IXA12IF1200PB

IXA12IF1200PB preliminary XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 20 A 1200 V 1.8 V Part number IXA12IF1200PB (G) 1 E (3) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers Package: ● Housing: TO-220 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant IGBT Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA Total power dissipation Collector emitter leakage current Definition Collector emitter voltage Maximum DC gate voltage Collector current Conditions VGE = 0 V TVJ = 25°C TVJ = 25°C TC = 25°C TC = 90°C TVJ = 25°C VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = ±20 V IC = 9 A; VGE = 15 V TVJ = 25°C TVJ = 125 °C TVJ = 25°C TVJ = 125 °C min. typ. max. 1200 ±20 20 13 85 0.1 Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ 0.1 500 1.8 2.1 5.5 6 27 70 40 6.5 2.1 Gate emitter leakage cu...