Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
(0.425)
■ Features
• Lo...
Transistors
2SD2623
Silicon
NPN epitaxial planar type
For low-frequency amplification
Unit: mm
(0.425)
■ Features
Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5˚
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 150 150 −55 to +150 Unit V V V A A mW °C °C
10˚
(0.65) (0.65) 1.3±0.1 2.0±0.2
0.9±0.1
0.9+0.2 –0.1
1 : Base 2 : Emitter 3 : Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 2V
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3
*1
Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) VBE(sat) fT Cob Ron
Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = −50...
