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2sc4159

Part Number	2sc4159
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Apr 15, 2011
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet	2sc4159 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.
0 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction...

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