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SBP13007-O
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆...
www.DataSheet4U.com
SBP13007-O
High Voltage Fast-Switching
NPN Power
Transistor
Features
◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA
B
General Description
This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply.
C E
TO220
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃
Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W
Jan 2008. Rev. 0
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3
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SBP13007-O
Electrical Characteristics (TC=25℃ unless otherwise noted)
Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100℃ Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5....
