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R1LV1616RSD-8S

Renesas Technology

16Mb Advanced LPSRAM

R1LV1616R Series 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) REJ03C0101-0400Z Rev.4.00 2007.09.12 Description ...


Renesas Technology

R1LV1616RSD-8S

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Description
R1LV1616R Series 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pinpitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features Single 2.7-3.6V power supply Small stand-by current:2µA (3.0V, typ.) Data retention supply voltage =2.0V No clocks, No refresh All inputs and outputs are TTL compatible Easy memory expansion by CS1#, CS2, LB# and UB# Common Data I/O Three-state outputs: OR-tie capability OE# prevents data contention on the I/O bus Process technology: 0.15um CMOS www.DataSheet4U.com REJ03C0101-0400Z Rev.4.00 2007.09.12 page 1 of 15 R1LV1616R Series Ordering Information Type No. R1LV1616RSD-5S% R1LV1616RSD-7S% R1LV1616RSD-8S% R1LV1616RBG-5S% R1LV1616RBG-7...




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