R1LV1616H-I

R1LV1616H-I Series Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) REJ03C0195-0101 Rev.1.01 Nov.18.2004 Description The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 45/55 ns (max) Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 µW (typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation.  2 chip selection for battery backup Temperature range: −40 to +85°C Byte function (×8 mode) available by BYTE# & A-1. www.DataSheet4U.com Rev.1.01, Nov.18.2004, page 1 of 19 R1LV1616H-I Series Ordering Information Type No. R1LV1616HSA-4LI R1LV1616HSA-4SI R1LV1616HSA-5SI Access time 45 ns 45 ns 55 ns Package 48-pin plastic TSOPI (48P3R-B) www.DataSheet4U.com Rev.1.01, Nov.18.2004, page 2 of 19 R1LV1616H-I Series Pin Arrangement 48-pin TSOP A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# CS2 NU UB# LB# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ...