LP2301LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 LP2301LT1G Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT– 23 (TO–236AB) ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 D G 1 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75 C Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) o S Symbol VDS VGS ID IDM PD TJ, Tstg RqJC RqJA Limit -20 ±8 -2.3 -8 0.9 0.57 -55 to 150 Unit V A W o C o C/W 140 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing www.DataSheet4U.com 1/3 LESHAN RADIO COMPANY, LTD. LP2301LT1G ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic 3) Symbol Test Conditio...