EMT2DXV6T5

EMT2DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. http://onsemi.com (3) (2) (1) Lead−Free Solder Plating Low VCE(SAT), < 0.5 V MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc Q2 Q1 (4) (5) (6) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W 54 3 12 MARKING DIAGRAM 6 3M D SOT−563 CASE 463A Style 2 3M = Specific Device Code D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device EMT2DXV6T5 Package SOT−563 Shipping† 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.DataSheet4U.com © Semiconductor Components Industries, LLC, 2004 1 April, 2004 − Rev. 0...