INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current ...
INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET
Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID Ptot Tj Tstg
ARAMETER
Drain-Source Voltage (VGS=0) Gate-Source Voltage
Drain Current-continuous@ TC=25℃ Total Dissipation@TC=25℃ Max. Operating Junction Temperature Storage Temperature Range
w
ww
s c s .i
VALUE 200 ±30 9 72 150 -55~150
n c . i m e
UNIT V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.74 62.5 UNIT ℃/W ℃/W
Rth j-a Thermal Resistance,Junction to Ambient www.DataSheet4U.com
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 4.5A VGS= ±30V;VDS= 0 VDS...